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HFH9N90 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFH9N90
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors |
HUASHAN ELECTRONIC |
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HFH9N90 | N-Channel MOSFET HFH9N90
Apr 2009
HFH9N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology � |
SemiHow |
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