डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HBT169M | THYRISTORS HBT169M
THYRISTORS
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be |
KERSEMI |
|
HBT169M | THYRISTORS HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4
HBT169M
THYRISTORS
Description
Glass passivated, sensitive gate thyristors in a plas |
Hi-Sincerity Mocroelectronics |
|
HBT169M | Silicon Controlled Rectifiers SMD Type
Silicon Controlled Rectifiers HBT169M
Thyristor
Features
Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-state current :0.8A Non-repetitive peak on-state current :8A
|
Kexin |
www.DataSheet.in | 2017 | संपर्क |