डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HAT2282C | Silicon N-Channel Power MOSFET HAT2282C
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V)
• Low drive current • High density mounting • 2.5 V gate drive device
Outline
RE |
Renesas Technology |
|
HAT2282C | Silicon N-Channel Power MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |