डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HAT2221C | Silicon N-Channel Power MOSFET HAT2221C
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V)
• Low drive current. • High density mounting • 4.5 V gate drive devices.
Outline
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Renesas Technology |
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HAT2221C | Silicon N-Channel Power MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |