डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HAT2167H | Silicon N-Channel MOSFET HAT2167H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 4.2 m |
Renesas Technology |
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HAT2167H | Silicon N-Channel MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |