HAT2016R डाटा शीट PDF( Datasheet )

HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-438 H (Z) 9th. Edition June 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density

HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: P