H5N5006FM डाटा शीट PDF( Datasheet )

H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: IDSS = 1 µA max

H5N5006FM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 2.5 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf =