डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT50J122 | silicon N-channel IGBT GT50J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) ( |
Toshiba Semiconductor |
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GT50J121 | silicon N-channel IGBT | Toshiba Semiconductor |
|
GT50J122 | silicon N-channel IGBT | Toshiba Semiconductor |
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GT50J123 | Silicon N-Channel IGBT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |