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GJ1182 | PNP SILICON EPITAXIAL PLANAR TRANSISTOR www.DataSheet4U.com
CORPORATION
G J 11 8 2
Description Features
The GJ1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
ISSUED DATE :2005/10/06 |
GTM |
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GJ1182 | PNP SILICON EPITAXIAL PLANAR TRANSISTOR | GTM |
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