FQD7P20 डाटा शीट PDF( Datasheet )

FQD7P20 — P-Channel QFET® MOSFET FQD7P20 P-Channel QFET® MOSFET -200 V, -5.7 A, 690 mΩ November 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor�

isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID= -5.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max) ·100% avalanche tested ·