FQB8N60C डाटा शीट PDF( Datasheet )

FQB8N60C / FQI8N60C QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip

FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor�

FQB8N60CF 600V N-Channel MOSFET December 2005 FRFET FQB8N60CF 600V N-Channel MOSFET Features • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 12pF) �