logo

FQB12N60 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
FQB12N60

Fairchild Semiconductor
600V N-Channel MOSFET






• 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact