| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS FQA Series ! S Absolute Maximum Ratings Symb |
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Fairchild Semiconductor |
MOSFET • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild |
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Fairchild Semiconductor |
N-Channel QFET MOSFET • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semi |
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ON Semiconductor |
N-Channel QFET MOSFET • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s p |
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ON Semiconductor |
N-Channel MOSFET • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconduct |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 8.6A, 900V, RDS(on) = 1.3Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings S |
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