डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FLM5964-12F | C-Band Internally Matched FET w
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Fujitsu |
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FLM5964-12F | C-Band Internally Matched FET w
m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 30.5dBm • Low IM3 = -46dBc@Po e � |
Eudyna Devices |
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FLM5964-12F | C-Band Internally Matched FET FLM5964-12F
FEATURES
• • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 5.9 ~ 6.4GHz Impe |
SUMITOMO |
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FLM5964-12F-001 | C-Band Internally Matched FET FLM5964-12F/001
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=41.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matche |
SUMITOMO |
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