डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FKI06075 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 8mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and |
INCHANGE |
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FKI06075 | N-ch Trench Power MOSFET 60 V, 52 A, 5.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06075
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 5 |
SANKEN |
www.DataSheet.in | 2017 | संपर्क |