डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FJD3076 | NPN Epitaxial Silicon Transistor FJD3076
FJD3076
Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
1
D-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless |
Fairchild Semiconductor |
|
FJD3076 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
FJD3076
DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% tested ·Minimum Lot-to-Lot var |
INCHANGE |
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