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FGA30N60LSD | MOSFETs and bipolar transistors FGA30N60LSD
October 2008
FGA30N60LSD
Features
• Low saturation voltage: VCE(sat) =1.1V @ IC = 30A • High Input Impedance • Low Conduction Loss
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General Description
The FGA30N60LSD is a MOS gated hig |
Fairchild Semiconductor |
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FGA30N60LSD | MOSFETs and bipolar transistors | Fairchild Semiconductor |
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