| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V • Isolated source and drain pins • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profile TSSOP-8 package Ap |
|