डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDPF3860T | N-Channel MOSFET isc N-Channel MOSFET Transistor
FDPF3860T
·FEATURES ·With TO-220F packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 38.2mΩ@VGS=10V ·100% avalanche tested |
INCHANGE |
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FDPF3860T | N-Channel MOSFET FDPF3860T — N-Channel PowerTrench® MOSFET
December 2013
FDPF3860T
N-Channel PowerTrench® MOSFET
100 V, 20 A, 38.2 mΩ
Features
• RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A • Fast Switching Sp |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |