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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDP3651U | N-Channel MOSFET FDP3651U — N-Channel PowerTrench® MOSFET
October 2013
FDP3651U
N-Channel PowerTrench® MOSFET
100 V, 80 A, 18 mΩ
Features
• RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • High Performance Trench |
Fairchild Semiconductor |
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FDP3651U | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot- |
INCHANGE |
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