डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDP047N10 | N-Channel MOSFET FDP047N10 — N-Channel PowerTrench® MOSFET
FDP047N10
N-Channel PowerTrench® MOSFET
100 V, 164 A, 4.7 mΩ
November 2013
Features
• RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Spee |
Fairchild Semiconductor |
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FDP047N10 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FDP047N10
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 4.7mΩ@VGS=10V ·100% avalanche tested · |
INCHANGE |
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