डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDN86265P | MOSFET FDN86265P P-Channel PowerTrench® MOSFET
May 2014
FDN86265P
P-Channel PowerTrench® MOSFET
-150 V, -0.8 A, 1.2 Ω
Features
General Description
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS( |
Fairchild Semiconductor |
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FDN86265P | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-150 V, -0.8 A, 1.2 W
FDN86265P
General Description This P−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been optimized for the on−sta |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |