डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS4435BZ | MOSFET FDMS4435BZ P-Channel Power Trench® MOSFET
FDMS4435BZ
P-Channel PowerTrench® MOSFET
-30 V, -18 A, 20 mΩ
Features
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, I |
Fairchild Semiconductor |
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FDMS4435BZ | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-30 V, -18 A, 20 mW
FDMS4435BZ
General Description This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to min |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |