डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMC8882 | MOSFET FDMC8882 N-Channel Power Trench® MOSFET
FDMC8882
N-Channel Power Trench® MOSFET
30 V, 16 A, 14.3 m:
May 2014
Features
General Description
Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A Max rDS(on |
Fairchild Semiconductor |
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FDMC8882 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
30 V, 16 A, 14.3 mohm
FDMC8882
Description This N−Channel MOSFET is produced using onsemi’s advanced
POWETRENCH process that has been especially tailored to minimize the o |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |