डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDI036N10A | N-Channel MOSFET isc N-Channel MOSFET Transistor
FDI036N10A
·FEATURES ·With TO-262 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 4.5mΩ@VGS=10V ·100% avalanche tested |
INCHANGE |
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FDI036N10A | N-Channel MOSFET | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |