| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Consumer Appliance |
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