डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDB120N10 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FDB120N10
FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 12mΩ(Max) @ VGS= 10V ·100% ava |
Inchange Semiconductor |
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FDB120N10 | N-Channel MOSFET FDB120N10 — N-Channel PowerTrench® MOSFET
FDB120N10
N-Channel PowerTrench® MOSFET
100 V, 74 A, 12 mΩ
November 2013
Features
• RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A • Fast Switching Speed |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |