FDB075N15A डाटा शीट PDF( Datasheet )

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench® MOSFET 150 V, 130 A, 7.5 m Features • RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID

MOSFET – N-Channel, POWERTRENCH) 150 V, 130 A, 7.5 mW FDP075N15A, FDB075N15A Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that has been tailored to minimize the on

FDB075N15A-F085 N-Channel Power Trench® MOSFET FDB075N15A-F085 N-Channel Power Trench® MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS =