डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDA59N25 | 250V N-Channel MOSFET FDA59N25 — N-Channel UniFETTM MOSFET
FDA59N25
N-Channel UniFETTM MOSFET
250 V, 59 A, 49 mΩ
Features
• RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 63 nC) • Low Crss (Typ. |
Fairchild Semiconductor |
|
FDA59N25 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FDA59N25
FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 49mΩ(Max) ·100% avalanche teste |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |