FCP650N80Z डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤650mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

FCP650N80Z — N-Channel SuperFET® II MOSFET December 2015 FCP650N80Z N-Channel SuperFET® II MOSFET 800 V, 10 A, 650 m Features • RDS(on) = 530 mTyp.) • Ultra Low Gate Charge (Typ. Qg = 27