डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FCP125N65S | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
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FCP125N65S3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 125mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
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FCP125N65S3 | N-Channel MOSFET FCP125N65S3
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive
650 V, 24 A, 125 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is |
ON Semiconductor |
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FCP125N65S3R0 | N-Channel MOSFET FCP125N65S3R0
MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive
650 V, 24 A, 125 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |