डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DU2880 | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz an AMP comoanv
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figu |
Tyco Electronics |
|
DU2880 | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz an AMP comoanv
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figu |
Tyco Electronics |
|
DU2880T | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz an AMP comoanv
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figu |
Tyco Electronics |
|
DU2880T | RF Power MOSFET Transistor DU2880T
RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V
Features
N- channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power |
MA-COM |
|
DU2880U | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competit |
Tyco Electronics |
|
DU2880U | RF Power MOSFET Transistor DU2880U
RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power |
MA-COM |
|
DU2880V | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz an
AMP
company
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
. N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lowe |
Tyco Electronics |
www.DataSheet.in | 2017 | संपर्क |