डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DSR01S30SL | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
DSR01S30SL
1. Applications
• High-Speed Switching
2. Features
(1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V
3. Packaging and Internal Circuit
DSR01S30SL
1: |
Toshiba |
|
DSR01S30SC | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
|
DSR01S30SL | Schottky Barrier Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |