DMTH6010SCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.2mΩ(Max) ·100% avalanche tested ·Min

DMTH6010SCT 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 7.2mΩ @ VGS = 10V ID TC = +25°C 100A Description This new generation MOSFET features low on-resistance and