DMTH10H010LCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DMTH10H010LCT FEATURES ·Drain Current –ID= 108A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) ·100% avalan

DMTH10H010LCT 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 9.5mΩ @VGS = 10V Package TO220AB ID TC = +25°C 108A Description This new generation MOSFET features low on-