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DMT1 | Output Power Chokes Document 139-1
Output Power Chokes – Toroid Styles
The DMT power inductors are designed primarily for use as output chokes in switching power supplies. The toroid core design offers the highest inductance va |
Coilcraft |
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DMT10-2-1111 | LONG RANGE DISTANCE SENSORS ONLINE DATA SHEET
DMT10-2-1111
DMT
LONG RANGE DISTANCE SENSORS
A B C D E F
H I J K L M N O P Q R S T
DMT10-2-1111 | DMT
LONG RANGE DISTANCE SENSORS
Ordering information
Model name DMT10-2-1111
Other models a |
SICK |
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DMT10-2-1113 | LONG RANGE DISTANCE SENSORS ONLINE DATA SHEET
DMT10-2-1113
DMT
LONG RANGE DISTANCE SENSORS
A B C D E F
H I J K L M N O P Q R S T
DMT10-2-1113 | DMT
LONG RANGE DISTANCE SENSORS
Ordering information
Model name DMT10-2-1113
Other models a |
SICK |
|
DMT10-2-2211 | LONG RANGE DISTANCE SENSORS ONLINE DATA SHEET
DMT10-2-2211
DMT
LONG RANGE DISTANCE SENSORS
A B C D E F
H I J K L M N O P Q R S T
DMT10-2-2211 | DMT
LONG RANGE DISTANCE SENSORS
Ordering information
Model name DMT10-2-2211
Other models a |
SICK |
|
DMT10H003SPSW | 100V N-CHANNEL MOSFET DMT10H003SPSW
Green
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
Features
BVDSS 100V
RDS(ON) Max
3mΩ @ VGS = 10V 5mΩ @ VGS = 6V
ID Max TC = +25°C
152A 118A
Description and App |
DIODES |
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DMT10H009LCG | 100V N-Channel MOSFET DMT10H009LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.5V
ID TC = +25°C
47A
39A
Description and Applications
This new generation |
DIODES |
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DMT10H009LFG | 100V N-CHANNEL MOSFET Green
DMT10H009LFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
100V
8.5mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V
ID MAX TC = +25°C
50A
41A
Description
This MOSFET is designed |
DIODES |
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