DMN95H8D5HCT डाटा शीट PDF( Datasheet )

DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 1000V RDS(ON) 7Ω@VGS = 10V ID TC = +25°C 2.5A Description This new generation MOSFET features low on-resistance and fast sw

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON) 7Ω@VGS = 10V Package ITO220AB (Type TH) ID MAX TC = +25°C 2.5A Descr

isc N-Channel MOSFET Transistor DMN95H8D5HCTI FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) ·100% avalanc