DMN33D8L डाटा शीट PDF( Datasheet )

NEW PNREOWDUPCRTODUCT Product Summary V(BR)DSS 30V RDS(ON) max 3.0Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 250mA 200mA Description and Applications This MOSFET has been designed to minimize the

ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN33D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V ID max TA = +25°C

ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN33D8LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V ID Max TA = +25°C 2

NEW PNREOWDUPCRTODUCT Product Summary BVDSS 30V RDS(ON) 5Ω @ VGS = 4V 7Ω @ VGS = 2.5V ID TA = +25°C 200mA 115mA Description This new generation MOSFET has been designed to minimize the on-state resist

NEW PNREOWDUPCRTODUCT Product Summary BVDSS 30V RDS(ON) 5Ω @ VGS = 4V 7Ω @ VGS = 2.5V ID TA = +25°C 200mA 115mA Description and Applications This MOSFET is designed to meet the stringent requirements

ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN33D8LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V ID max TA = +25°C 350 mA Descriptio

DMN33D8LVQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V ID Max TA = +25°C 350 mA Description This MOSFET has been designed to minimize t