DMN3016LK3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 37.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·100% avalanche tested ·Min

A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID TC = +25°C 37.8A 32.8A Features  1