DMN10H100SK3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 80mΩ(Max) ·100% avalanche tested ·Mini

NEW PNREOWDPURCOTDUCT DMN10H100SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 80mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID TC = +25°C 18A 16A Description This new generat