DMN10H099SK3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 80mΩ(Max) ·100% avalanche tested ·Mini

NEW PNREOWDPURCOTDUCT   Green DMN10H099SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 80mΩ @ VGS = 10V 99mΩ @ VGS = 6V ID TC = +25°C 17A 15A Description This