डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DMG4N65CTI | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.0Ω(Max) ·100% avalanche tested ·Minim |
INCHANGE |
|
DMG4N65CTI | N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO
DMG4N65CTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
650V
3.0Ω@VGS = 10V
Package ITO220-3
ID TC = 25°C
4.0 A
Description
This new generation complementary |
Diodes |
www.DataSheet.in | 2017 | संपर्क |