डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DE475-102N21A | RF Power MOSFET DE475-102N21A
RF Power MOSFET
♦ ♦ ♦ ♦ ♦
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS |
IXYS Corporation |
|
DE475-102N21A | RF Power MOSFET | IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |