DD250 डाटा शीट PDF( Datasheet )

® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  Low Leakage  Low Cost  High Surge Current Capability  Low Forward Voltage Drop  C-Band Terminal Construction DD250/S – DD

DATA SHEET 256M bits DDR SDRAM EDD2508AETA (32M words × 8 bits) EDD2516AETA (16M words × 16 bits) Specifications • Density: 256M bits • Organization  8M words × 8 bits × 4 banks (EDD2508AETA) www.Da

® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  Low Leakage  Low Cost  High Surge Current Capability  Low Forward Voltage Drop  C-Band Terminal Construction DD250/S – DD

DD250S65K3 Highly insulated module Highly insulated module Features • Electrical features - VCES = 6500 V - IC nom = 250 A / ICRM = 500 A • Mechanical features - AlSiC base plate for increased thermal cycli