| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Power Transistor 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE |
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Inchange Semiconductor Company |
2SD5703 ltage IC= 8A; IB= 1.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICBO Collector Cutoff Curr |
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Fairchild Semiconductor |
KSD5703 V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 8A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 15 5.3 Min. Typ. Max. 1 10 1 40 7.3 5 1.5 0.3 V V µs Units mA µA mA ©2000 Fairchild Semic |
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Inchange Semiconductor |
Silicon NPN Power Transistor urrent VCE= 1400V; VBE= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICBO Collector Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain tf Fall Time IC= 1A; VCE= 5V IC= 8A; VCE= 5V IC= 6A, IB1= 1.2A; IB2= -2.4A; V |
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ON Semiconductor |
High Current IGBT Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active open−drain FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies includ |
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ON Semiconductor |
High Current IGBT Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active open−drain FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies includ |
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STMicroelectronics |
RF POWER TRANSISTORS sembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Volta |
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STMicroelectronics |
RF POWER TRANSISTORS sembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Volta |
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Fairchild Semiconductor |
NPN Transistor 0 VCE = 5V, IC = 1A VCE = 5V, IC = 8A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 15 5.3 Min. Typ. Max. 1 10 1 40 7.3 5 1.5 0.3 V V µs Units mA µA mA ©2000 Fairchild Semiconductor International |
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STMicroelectronics |
RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is d |
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STMicroelectronics |
RF POWER TRANSISTORS The LdmoSTFAMILY ni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 1.75 o C/W January 2000 1/7 SD57030-01 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0 |
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ON Semiconductor |
High Current IGBT Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active open−drain FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies includ |
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ST Microelectronics |
RF POWER TRANSISTOR ni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 1.75 o C/W January 2000 1/7 SD57030-01 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0 |
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ST Microelectronics |
RF POWER TRANSISTOR 0 Unit V V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.75 °C/W 1/7 March, 24 2003 SD57030 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS |
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NJS |
Silicon NPN Power Transistor .20 15.80 C 5,20 5.80 D 0,65 0.85 F 3.30 3,90 G 3.90 4,10 K 4.30 4.70 J 0,80 1.00 K 18,30 18.70 L 1,90 2.10 N 10.70 11.10 Q 4.40 4.60 R 3.30 3.70 S 3.20 3,40 U 9,50 9.70 Y 1,90 2.10 Z 1.40 1.60 NJ Semi-Conductors reserves the right to change test co |
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