डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
D1912 | 2SD1912 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1912
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector |
Inchange Semiconductor |
|
D1913 | 2SD1913 | Sanyo Semicon Device |
|
D1918 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
D1911 | 2SD1911 | Wing Shing Computer Components |
|
D1910 | 2SD1910 | Wing Shing Electronic |
|
D1918 | 2SD1918 | Rohm |
|
D1912 | 2SD1912 | Inchange Semiconductor |
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