D103 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25�

N Netz-Gleichrichterdiode Rectifier Diode Datenblatt / Data sheet D1030N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values PerKiodeisncnhedaStpeitznensperrspan

TetraFET D1031UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD MET

Schnelle beschaltungslose Diode Fast Hard Drive Diode Technische Information / technical information D1031SH Key Peanranmdaetteenrs VRRM IFAVM IFSM VT0 rT RthJC Clamping Force Max. Diameter Contact Diameter H

TetraFET D1031UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD MET

www.DataSheet4U.com TetraFET D1034UK METAL GATE RF SILICON FET MECHANICAL DATA B A C E (2 pls) K 1 2 3 4 F G 8 J Typ. 7 6 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz