CGHV31500F डाटा शीट PDF( Datasheet )

PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed spe

CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HEMT Description Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for