CGH27060F डाटा शीट PDF( Datasheet )

PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain an

CGH27060F 60 W Peak, 28 V, GaN HEMT for Linear Communications from VHF to 3 GHz Description Wolfspeed’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for