डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CET6601 | P-Channel MOSFET CET6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON). Rugged and relia |
CET |
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CET6601 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |